First reliability demonstration of sub-200 nm AlN/GaN-on-silicon double heterostructure HEMTs for Ka band applications - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Device and Materials Reliability Année : 2013

First reliability demonstration of sub-200 nm AlN/GaN-on-silicon double heterostructure HEMTs for Ka band applications

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hal-00913577 , version 1 (04-12-2013)

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G. Meneghesso, M. Meneghini, F Medjdoub, Y. Tagro, B. Grimbert, et al.. First reliability demonstration of sub-200 nm AlN/GaN-on-silicon double heterostructure HEMTs for Ka band applications. IEEE Transactions on Device and Materials Reliability, 2013, 13, pp.480-488. ⟨10.1109/TDMR.2013.2276425⟩. ⟨hal-00913577⟩
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