Growth of boron nitride on (0001) AlN templates by High Temperature- Hydride Vapor Phase Epitaxy (HT-HVPE) - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physics Procedia Année : 2013

Growth of boron nitride on (0001) AlN templates by High Temperature- Hydride Vapor Phase Epitaxy (HT-HVPE)

Résumé

One mu m-thick (0001) t-BN layers have been grown on w-AlN template by HT-HVPE (High Temperature Hydride Vapor Phase Epitaxy). The experimental set-up consists of a vertical cold-wall quartz reactor working at low pressure with an inductively heated graphite susceptor. The used reactants are ammonia (NH3) and boron trichloride (BCl3). As-grown BN layers have been characterized by XRD and TEM. The influence of the temperature and the N/B ratio of precursors in the gas phase, on the c-lattice parameter of BN layer, have been investigated in order to optimize the crystalline quality. For a deposition at a temperature of 1600 degrees C and a N/B ratio of 7.5, the growth of a 2 mu m-thick t-BN layer with lattice parameters (a and c) of 2.50 and 6.78 angstrom has been achieved.

Domaines

Matériaux

Dates et versions

hal-00911142 , version 1 (28-11-2013)

Identifiants

Citer

N. Coudurier, R. Boichot, Florian Mercier, R. Reboud, S. Lay, et al.. Growth of boron nitride on (0001) AlN templates by High Temperature- Hydride Vapor Phase Epitaxy (HT-HVPE). Physics Procedia, 2013, 46, pp.102-106. ⟨10.1016/j.phpro.2013.07.050⟩. ⟨hal-00911142⟩
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