Interfacial X-ray photospectrometry study of In0.53Ga0.47As under different passivation treatments for metal oxide semiconductor field effect transistor devices - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Micro and Nano Letters Année : 2013

Interfacial X-ray photospectrometry study of In0.53Ga0.47As under different passivation treatments for metal oxide semiconductor field effect transistor devices

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hal-00909847 , version 1 (27-11-2013)

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M.F. Mohd Razip Wee, Arash Dehzangi, Nicolas Wichmann, S. Bollaert, Burhanuddin Yeop Majlis. Interfacial X-ray photospectrometry study of In0.53Ga0.47As under different passivation treatments for metal oxide semiconductor field effect transistor devices. Micro and Nano Letters, 2013, 8, pp.836-840. ⟨10.1049/mnl.2013.0560⟩. ⟨hal-00909847⟩
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