Study of black silicon obtained by cryogenic plasma etching : Approach to achieve the hot spot of a thermoelectric energy harvester
K.N. Nguyen
,
David Abi Saab
(1)
,
Philippe Basset
(1)
,
Elodie Richalot
(1)
,
Maurine Malak
(1)
,
Nicolas Pavy
(1)
,
F. Flourens
,
F. Marty
(1)
,
Dan Angelescu
(1)
,
Yamin Leprince
(2)
,
Tarik Bourouina
(1)
K.N. Nguyen
- Fonction : Auteur
David Abi Saab
- Fonction : Auteur
- PersonId : 779699
- IdRef : 19581715X
Philippe Basset
- Fonction : Auteur
- PersonId : 18820
- IdHAL : philippe-basset
- ORCID : 0000-0002-9790-8247
- IdRef : 07452285X
Elodie Richalot
- Fonction : Auteur
- PersonId : 11732
- IdHAL : elodie-richalot
- ORCID : 0000-0001-8866-6621
- IdRef : 059839414
F. Flourens
- Fonction : Auteur
F. Marty
- Fonction : Auteur
- PersonId : 844609
Yamin Leprince
- Fonction : Auteur
- PersonId : 832546
Tarik Bourouina
- Fonction : Auteur
- PersonId : 18824
- IdHAL : tarik-bourouina
- ORCID : 0000-0003-2342-7149
- IdRef : 110802160
Résumé
n this paper, we study the enhanced absorption properties of micro/nano structured silicon surface under incident electromagnetic illumination and its capacity to convert light into heat. We simulate the optical reflectance of three-dimensional micro/nano silicon cones of different dimensions and under different electric field incident angles. According to the favorable simulation results, we fabri- cate black silicon with conical microstructures that exhibits excellent anti-reflectivity behavior. Plasma etching under cryogenic temperatures is used for this purpose in an induc- tively coupled plasma-reactive ion etching reactor. The reflectance of the black silicon is measured to be approxi- mately 1 % in the optical wavelength range, by using an integrating sphere coupled to a calibrated spectrometer. Fur- thermore, a device integrating a resistance temperature detector in a black silicon area is developed in order to investigate its efficiency as a photo-thermal converter
Domaines
ElectroniqueFormat du dépôt | Notice |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
Study of black silicon obtained by cryogenic plasma etching : Approach to achieve the hot spot of a thermoelectric energy harvester
|
Résumé |
en
n this paper, we study the enhanced absorption properties of micro/nano structured silicon surface under incident electromagnetic illumination and its capacity to convert light into heat. We simulate the optical reflectance of three-dimensional micro/nano silicon cones of different dimensions and under different electric field incident angles. According to the favorable simulation results, we fabri- cate black silicon with conical microstructures that exhibits excellent anti-reflectivity behavior. Plasma etching under cryogenic temperatures is used for this purpose in an induc- tively coupled plasma-reactive ion etching reactor. The reflectance of the black silicon is measured to be approxi- mately 1 % in the optical wavelength range, by using an integrating sphere coupled to a calibrated spectrometer. Fur- thermore, a device integrating a resistance temperature detector in a black silicon area is developed in order to investigate its efficiency as a photo-thermal converter
|
Auteur(s) |
K.N. Nguyen
, David Abi Saab
1
, Philippe Basset
1
, Elodie Richalot
1
, Maurine Malak
1
, Nicolas Pavy
1
, F. Flourens
, F. Marty
1
, Dan Angelescu
1
, Yamin Leprince
2
, Tarik Bourouina
1
1
ESYCOM -
Electronique, Systèmes de communication et Microsystèmes
( 43154 )
- Université de Paris-Est - Marne-la-Vallée, Cité Descartes, Bâtiment Copernic, 5 bd Descartes, 77454 Marne-la-Vallée Cedex 2
- France
2
LPMDI -
Laboratoire de Physique des Matériaux Divisés et des Interfaces
( 1253 )
- Université de Paris-Est - Marne-la-Vallée, Cité Descartes, Bâtiment Lavoisier, 5 bd Descartes, 77454 Marne-la-Vallée Cedex 2
- France
|
Comité de lecture |
Oui
|
Vulgarisation |
Non
|
Langue du document |
Anglais
|
Nom de la revue |
|
Audience |
Internationale
|
Date de publication |
2013-11
|
Volume |
18
|
Numéro |
11
|
Page/Identifiant |
1807-1814
|
Domaine(s) |
|
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