Erbium-activated silica-tin oxide glass ceramics for photonic integrated circuits: fabrication, characterisation and assessment - Archive ouverte HAL
Communication Dans Un Congrès Proceedings of SPIE, the International Society for Optical Engineering Année : 2012

Erbium-activated silica-tin oxide glass ceramics for photonic integrated circuits: fabrication, characterisation and assessment

Résumé

Er-doped (100-x) SiO2 - x SnO2 glass-ceramic monoliths were prepared using a sol-gel processing. The thermally induced growth of SnO2 nanocrystals was followed by Raman spectroscopic measurements. Using x-ray crystallography, the average crystal size was determined to be about 5nm for a heat-treatment at 1000C°. Analysis of the photoluminescence data shows that the amount of Er3+ ions incorporated in the SnO2 nanocrystals can be controlled by the tin dioxide concentration. In addition, spectroscopic evidence is provided of a transfer of energy from SnO2 nanocrystals to erbium ions within the silica matrix, thus confirming the crystalline environment of the rare-earth ions.
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Dates et versions

hal-00903707 , version 1 (12-11-2013)

Identifiants

  • HAL Id : hal-00903707 , version 1

Citer

Tran T.T. Van, Christophe Kinowski, Odile Cristini-Robbe, Bruno Capoen, Alessandro Chiasera, et al.. Erbium-activated silica-tin oxide glass ceramics for photonic integrated circuits: fabrication, characterisation and assessment. SPIE Photonics Europe, Apr 2012, Bruxelles, Belgium. pp.84311F. ⟨hal-00903707⟩
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