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Article Dans Une Revue Applied Physics Letters Année : 2013

Electrowetting at a liquid metal-oxide-semiconductor junction

Résumé

A voltage polarity dependent, voltage-induced wetting transition is demonstrated using a liquid metal-oxide-semiconductor (MOS) junction. A droplet of mercury can be made to spread out on an oxidized silicon wafer upon the application of a voltage. The wetting is seen to depend on the doping type and doping density of the silicon—a voltage polarity related asymmetrical electrowetting is observed. Impedance measurements on Al-SiO2-Si MOS capacitors link the space-charge effects with the electrowetting on the Hg-SiO2-Si MOS junction. A modified Young-Lippmann equation for electrowetting at a MOS junction is derived—the model agrees with the experiments
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Dates et versions

hal-00871933 , version 1 (27-05-2022)

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S. Arscott. Electrowetting at a liquid metal-oxide-semiconductor junction. Applied Physics Letters, 2013, 103 (14), pp.144101-1-5. ⟨10.1063/1.4822308⟩. ⟨hal-00871933⟩
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