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Article Dans Une Revue Microwave and Optical Technology Letters Année : 2013

W-band RF-MEMS Dicke switch networks in a GaAs MMIC process

S. Bint Reyaz
  • Fonction : Auteur
C. Samuelsson
  • Fonction : Auteur
R. Malmqvist
  • Fonction : Auteur
M. Fryziel
P.A. Rolland
  • Fonction : Auteur
B. Grandchamp
  • Fonction : Auteur
P. Rantakari
  • Fonction : Auteur
T. Vähä-Heikkilä
  • Fonction : Auteur

Résumé

A novel design of a W-band RF-microelectro-mechanical-system (RF-MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0-level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3-1.7 dB (uncapped on-wafer), 1.6-2.0 dB (uncapped chips), and 1.8-2.7 dB (0-level packaged chips) at 70-96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer-level packaged W-band low loss/DC power and high isolation/linearity RF-MEMS Dicke switch circuits made in a GaAs foundry process.

Dates et versions

hal-00871901 , version 1 (11-10-2013)

Identifiants

Citer

S. Bint Reyaz, C. Samuelsson, R. Malmqvist, S. Seok, M. Fryziel, et al.. W-band RF-MEMS Dicke switch networks in a GaAs MMIC process. Microwave and Optical Technology Letters, 2013, 55, pp.2849-2853. ⟨10.1002/mop.27983⟩. ⟨hal-00871901⟩
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