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Article Dans Une Revue Applied Physics Letters Année : 2013

Direct silicon bonding dynamics: A coupled fluid/structure analysis

Résumé

During direct bonding, a thin gas film is trapped in-between the two wafers, leading to an interactive fluid/structure dynamics. A model of bonding dynamics is formulated using the plate approximation, Reynolds equation, and adhesion forces as the boundary condition at the bonding front. The transient equation is solved numerically in a one dimensional cylindrical case. The entire process, including initiation and propagation of the front, is modelled. The model is supported by experimental data from an original setup involving non-contact optical sensors to measure the vertical movement of the wafer during the bonding sequence. (C) 2013 AIP Publishing LLC

Domaines

Matériaux
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Dates et versions

hal-00869261 , version 1 (02-10-2013)

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E. Navarro, Y. Brechet, R. Moreau, T. Pardoen, J.P. Raskin, et al.. Direct silicon bonding dynamics: A coupled fluid/structure analysis. Applied Physics Letters, 2013, 103 (3), ⟨10.1063/1.4813312⟩. ⟨hal-00869261⟩
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