Elaboration of core Si/shell SiC nanowires
Résumé
Silicon nanowires obtained by a top-down approach have been carburized at high temperature and atmospheric pressure with two different gaseous precursors: CH4 and C3H8. These processes reveal core Si / shell 3C-SiC nanowires. After being characterized by SEM, FIB-SEM and TEM microscopies, the 3C-SiC layer has been used as seed layer for the growth of epitaxial 3C-SiC on the nanowires. Preferential growth of 3C-SiC on the sidewalls of nanowires has been observed. Thanks to the biocompatibility of SiC compared to Si, this layer could act as a protective shell for biosensors based on Si nanowires transistor.
Domaines
Matériaux
Origine : Fichiers produits par l'(les) auteur(s)