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Article Dans Une Revue Materials Science Forum Année : 2013

Elaboration of core Si/shell SiC nanowires

Résumé

Silicon nanowires obtained by a top-down approach have been carburized at high temperature and atmospheric pressure with two different gaseous precursors: CH4 and C3H8. These processes reveal core Si / shell 3C-SiC nanowires. After being characterized by SEM, FIB-SEM and TEM microscopies, the 3C-SiC layer has been used as seed layer for the growth of epitaxial 3C-SiC on the nanowires. Preferential growth of 3C-SiC on the sidewalls of nanowires has been observed. Thanks to the biocompatibility of SiC compared to Si, this layer could act as a protective shell for biosensors based on Si nanowires transistor.

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Matériaux
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hal-00850239 , version 1 (29-04-2022)

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Paternité - Pas d'utilisation commerciale

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Maelig Ollivier, L. Latu-Romain, Arnaud Mantoux, Mickaël Martin, T. Baron, et al.. Elaboration of core Si/shell SiC nanowires. Materials Science Forum, 2013, 740-742, pp.306-310. ⟨10.4028/www.scientific.net/MSF.740-742.306⟩. ⟨hal-00850239⟩
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