P-type nitrogen-doped ZnO nanoparticles stable under ambient conditions. - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of the American Chemical Society Année : 2012

P-type nitrogen-doped ZnO nanoparticles stable under ambient conditions.

Résumé

Zinc oxide is considered as a very promising material for optoelectronics. However, to date, the difficulty in producing stable p-type ZnO is a bottleneck, which hinders the advent of ZnO-based devices. In that context, nitrogen-doped zinc oxide receives much attention. However, numerous reviews report the controversial character of p-type conductivity in N-doped ZnO, and recent theoretical contributions explain that N-doping alone cannot lead to p-typeness in Zn-rich ZnO. We report here that the ammonolysis at low temperature of ZnO2 yields pure wurtzite-type N-doped ZnO nanoparticles with an extraordinarily large amount of Zn vacancies (up to 20%). Electrochemical and transient spectroscopy studies demonstrate that these Zn-poor nanoparticles exhibit a p-type conductivity that is stable over more than 2 years under ambient conditions.

Domaines

Matériaux
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Dates et versions

hal-00846565 , version 1 (19-07-2013)

Identifiants

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Benoit Chavillon, Laurent Cario, Adèle Renaud, Franck Tessier, François Cheviré, et al.. P-type nitrogen-doped ZnO nanoparticles stable under ambient conditions.. Journal of the American Chemical Society, 2012, 134 (1), pp.464-70. ⟨10.1021/ja208044k⟩. ⟨hal-00846565⟩
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