High cut-off frequency performances of 100nm-gate InAlAs/InGaAs high electron mobility transistors on polyimide flexible substrate - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2013

High cut-off frequency performances of 100nm-gate InAlAs/InGaAs high electron mobility transistors on polyimide flexible substrate

J. Shi
  • Fonction : Auteur
Yannick Roelens
S. Bollaert
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Dates et versions

hal-00828414 , version 1 (31-05-2013)

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  • HAL Id : hal-00828414 , version 1

Citer

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert. High cut-off frequency performances of 100nm-gate InAlAs/InGaAs high electron mobility transistors on polyimide flexible substrate. 37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.15-16. ⟨hal-00828414⟩
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