Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices - Archive ouverte HAL
Article Dans Une Revue Japanese Journal of Applied Physics, part 2 : Letters Année : 2013

Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices

B. Grimbert
D. Ducatteau
  • Fonction : Auteur
N. Rolland
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Dates et versions

hal-00809852 , version 1 (10-04-2013)

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F Medjdoub, B. Grimbert, D. Ducatteau, N. Rolland. Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices. Japanese Journal of Applied Physics, part 2 : Letters, 2013, 6, pp.044001-1-3. ⟨10.7567/APEX.6.044001⟩. ⟨hal-00809852⟩
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