Communication Dans Un Congrès Année : 2013

Raman investigation of aluminum-doped 4H-SiC

Pawel Kwasnicki
  • Fonction : Auteur
  • PersonId : 998823
  • IdRef : 196096332
Herve Peyre
Leszek Konczewicz
Sylvie Contreras
Marcin Zielinski
  • Fonction : Auteur
Jean Camassel
  • Fonction : Auteur
  • PersonId : 839246
  • IdRef : 069193568

Résumé

Raman scattering spectra have been collected on p-type 4H-SiC samples doped with aluminum up to 5×10^19 atoms per cubic cm. The distortion and asymmetry of FTA modes which appear in the low frequency range has been probed in great details. We show that, using standard Fano formulae with three parameters per mode, one can successively fit all FTA modes profiles in the concentration range 2×10^16 - 5×10^19 Al.cm-3

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Dates et versions

hal-00803766 , version 1 (22-03-2013)

Identifiants

Citer

Sandrine Juillaguet, Pawel Kwasnicki, Herve Peyre, Leszek Konczewicz, Sylvie Contreras, et al.. Raman investigation of aluminum-doped 4H-SiC. ECSCRM 2012, Sep 2012, Saint-Petersburg, Russia. pp.357-360, ⟨10.4028/www.scientific.net/MSF.740-742.357⟩. ⟨hal-00803766⟩
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