Milliwatt-level power generated in the sub-terahertz range by photomixing in a metal-metal resonant cavity GaAs photoconductor - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2012

Milliwatt-level power generated in the sub-terahertz range by photomixing in a metal-metal resonant cavity GaAs photoconductor

Résumé

It is shown from on-wafer measurement that a continuous wave output power of 0.35 mW at 305 GHz can be generated by photomixing in a metal-metal Fabry-Pérot GaAs photoconductor.
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Dates et versions

hal-00803094 , version 1 (21-03-2013)

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Emilien Peytavit, Sylvie Lepilliet, Francis Hindle, Christophe Coinon, Tahsin Akalin, et al.. Milliwatt-level power generated in the sub-terahertz range by photomixing in a metal-metal resonant cavity GaAs photoconductor. Conference on Lasers and Electro-Optics, CLEO 2012, Laser Science to Photonic Applications, May 2012, San Jose, CA, United States. paper CTu1B.2, 1-2, ⟨10.1364/CLEO_SI.2012.CTu1B.2⟩. ⟨hal-00803094⟩
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