Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2012

Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi
  • Fonction : Auteur
Nicolas Wichmann
Yannick Roelens
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hal-00801047 , version 1 (15-03-2013)

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  • HAL Id : hal-00801047 , version 1

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J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert. Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate. 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801047⟩
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