Characterization of carbon nanotube field effect transistors using an active load pull LSNA setup - Archive ouverte HAL
Communication Dans Un Congrès Année : 2008

Characterization of carbon nanotube field effect transistors using an active load pull LSNA setup

Résumé

CNFETs have been characterized under large signal conditions at 600 MHz with an original active load pull setup using a LSNA. A non linear model of CNFET has been established and validated by comparison with the experimental results. Using this non linear model, design of circuits can be considered, allowing the optimization in non linear behavior.
Fichier non déposé

Dates et versions

hal-00800982 , version 1 (14-03-2013)

Identifiants

Citer

Christophe Gaquière, Arnaud Curutchet, Didier Theron, Matthieu Werquin, Damien Ducatteau, et al.. Characterization of carbon nanotube field effect transistors using an active load pull LSNA setup. 71st ARFTG Microwave Measurement Conference, IEEE MTT-S International Microwave Symposium, Jun 2008, Atlanta, GA, United States. pp.97-99, ⟨10.1109/MWSYM.2008.4633311⟩. ⟨hal-00800982⟩
57 Consultations
0 Téléchargements

Altmetric

Partager

More