Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrates - Archive ouverte HAL
Communication Dans Un Congrès Année : 2011

Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrates

J. Shi
  • Fonction : Auteur
Nicolas Wichmann
Yannick Roelens
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hal-00799793 , version 1 (12-03-2013)

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  • HAL Id : hal-00799793 , version 1

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J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert. Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrates. 20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799793⟩
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