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Article Dans Une Revue Journal of Materials Science: Materials in Electronics Année : 2012

Interface fracture surface energy of sol-gel bonded silicon wafers by three-point bending

Résumé

To probe the interface of silicon sol-gel bonded wafers we developed in-situ micromechanical bending test coupled with optical microscopy. The silicon wafers were bonded together at room temperature using sol-gel silica and dried at 60 oC and sintered at 600 oC. Beam specimens were cut from the bonded wafers, then notched and tested in three-point bending. During bending the crack opening from a notch and the deviation along the interface was observed with an optical microscope. To quantify the interfacial debonding from considering the experimental results, a simple energy balance allows an apparent inter- facial fracture surface energy to be determined. Experi ments and the determined interfacial surface energies show that the bonding of the silicon wafers depends on the silica sol-gel chemistry and on the temperature of the thermal treatment during the bonding process.

Domaines

Matériaux
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Dates et versions

hal-00797522 , version 1 (06-03-2013)

Identifiants

  • HAL Id : hal-00797522 , version 1

Citer

B.A. Latella, M. Ignat. Interface fracture surface energy of sol-gel bonded silicon wafers by three-point bending. Journal of Materials Science: Materials in Electronics, 2012, 23 (1), pp.8-13. ⟨hal-00797522⟩
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