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Communication Dans Un Congrès Année : 2006

Numerical simulations of conduction and low-frequency noise in polysilicon TFTs

Résumé

Numerical simulations of static conduction and low-frequency noise are carried out in N-channel polysilicon TFTs biased from weak to strong inversion, and operating in the linear mode. ISE-TCAD software is used to make simulations and numerical results are first adjusted to experimental data. The physical model used to simulate the static conduction is the drift diffusion model. Results show that the drain current follows the Meyer-Neldel effect (compensation law) and that this latter is related to the distribution of states located at the interface and associated with the dangling bonds along the channel. Low-frequency noise is simulated by GR processes. Local noise sources are defined within the active layer. Spectral density of current fluctuations was calculated by using the two-dimensional direct impedance field method. Results underline that the sources responsible of noise in the TFTs are mainly located close to the interface. A noise parameter is defined according to the Hooge empirical relationship. The microscopic parameter deduced from numerical simulation is lower than the macroscopic one deduced from noise measurements. The lower value is attributed to the drain current crowding induced by non conducting spots due to the defects in the channel. The ratio of these two parameters is considered as a factor of merit to quantify the interface quality.
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Dates et versions

hal-00795792 , version 1 (28-02-2013)

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  • HAL Id : hal-00795792 , version 1

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Abdelmalek Boukhenoufa, Christophe Cordier, Laurent Pichon, Bogdan Cretu. Numerical simulations of conduction and low-frequency noise in polysilicon TFTs. EMRS, May 2006, Nice, France. ⟨hal-00795792⟩
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