Oxide-confined mid-infrared VCSELs

The first oxide-confined GaSb-based vertical-cavity surface emitting laser operating in the mid-infrared is demonstrated. Laser operation at -20°C in continuous wave is achieved with a device emitting around 2.3 µm. The influence of the lateral confinement on laser performances is presented and discussed.

Mots clés

thermal wet oxidation Bragg reflectors AlOx GaSb VCSEL Mid-infrared

Domaines

Optique / photonique

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https://hal.science/hal-00788447

Soumis le : jeudi 14 février 2013-14:44:39

Dernière modification le : lundi 16 septembre 2024-17:52:04

Dates et versions

hal-00788447 , version 1 (14-02-2013)

Identifiants

HAL Id : hal-00788447 , version 1
DOI : 10.1049/el.2012.3572

Citer

Youness Laaroussi, Dorian Sanchez, Laurent Cerutti, Christophe Levallois, Cyril Paranthoën, et al.. Oxide-confined mid-infrared VCSELs. Electronics Letters, 2012, 48 (25), pp.1616-1618. ⟨10.1049/el.2012.3572⟩. ⟨hal-00788447⟩

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