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Article Dans Une Revue IEEE Electron Device Letters Année : 2012

Sub-1-dB minimum-noise-figure performance of GaN-on-Si transistors up to 40 GHz

Résumé

We report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a 100-mm Si substrate with low-noise properties up to 40 GHz. The ultrathin-barrier GaN DHFETs simultaneously exhibit high current density, high transconductance, and high frequency performance (above 100 GHz) while showing low dc-to-RF dispersion and low gate and drain leakage currents. Consequently, sub-1-dB minimum noise figure at 36 GHz with an associated gain of 7.5 dB has been achieved. To our knowledge, this is the best noise performance reported in the K a-band for any GaN device
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Dates et versions

hal-00786956 , version 1 (11-02-2013)

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F Medjdoub, Yoann Tagro, Malek Zegaoui, B. Grimbert, Francois Danneville, et al.. Sub-1-dB minimum-noise-figure performance of GaN-on-Si transistors up to 40 GHz. IEEE Electron Device Letters, 2012, 33 (9), pp.1258-1260. ⟨10.1109/LED.2012.2205215⟩. ⟨hal-00786956⟩
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