Thin films of organosilicon materials produced by plasma-assisted deposition are frequently used because of their multifunctional character, but few comparative studies into their growth on structured surfaces are available. Two types of CVD processes, plasma-enhanced (PE)CVD and remote plasma-enhanced (RPE)CVD are taken as typical operating conditions. Polymer films of thicknesses ranging from 0.25 to 1.2 µm are obtained by both processes from the tetramethylsiloxane (TMDSO) precursor, on silicon substrates microstructured with a set of patterns (trenches, holes, and columns) with various spacings, and with vertical dimensions of 1.3 or 1.45 µm. Analysis by scanning electron microscopy (SEM) of the samples is carried out after sample cleavage. The effects of pattern size and shape, defined by the aspect ratio parameter, on the local growth rate are studied more specifically for trenches for both PECVD and RPECVD processes