Reactivity between liquid Si or Si alloys and graphite.
Résumé
The fundamental issues of the reaction at liquid Si/graphite interfaces between Si melting point (1412 degrees C) and 1600 degrees C are studied on the basis of results obtained with polycrystalline graphite concerning the growth kinetics of the interfacial reaction layer and the microstructure and morphology of this layer. Experiments were also performed using vitreous carbon substrates. Results are also reported for Si-Al alloys at 1000 degrees C. The elementary process controlling the growth kinetics is determined and a model is proposed to describe the different stages of the interfacial reaction.