Stress-induced leakage current and trap generation in HfO2 thin films - Archive ouverte HAL Access content directly
Journal Articles Journal of Applied Physics Year : 2012
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hal-00777842 , version 1 (18-01-2013)

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  • HAL Id : hal-00777842 , version 1

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C. Mannequin, P. Gonon, Corentin Vallée, L. Latu-Romain, A. Bsiesy, et al.. Stress-induced leakage current and trap generation in HfO2 thin films. Journal of Applied Physics, 2012, pp.112 (2012) 074103. ⟨hal-00777842⟩
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