Improvement of a Vertical Thin Film Transistor Based on Low-Temperature Polycrystalline Silicon Technology by Introduction of an Oxide Barrier between Drain and Source Layers - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue ECS Transactions Année : 2012

Improvement of a Vertical Thin Film Transistor Based on Low-Temperature Polycrystalline Silicon Technology by Introduction of an Oxide Barrier between Drain and Source Layers

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hal-00772001 , version 1 (09-01-2013)

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  • HAL Id : hal-00772001 , version 1

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Peng Zhang, Emmanuel Jacques, Regis Rogel, Olivier Bonnaud. Improvement of a Vertical Thin Film Transistor Based on Low-Temperature Polycrystalline Silicon Technology by Introduction of an Oxide Barrier between Drain and Source Layers. ECS Transactions, 2012, 49 (1), pp.491-496. ⟨hal-00772001⟩
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