Effect of HCl on the doping and shape control of silicon nanowires - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nanotechnology Année : 2012

Effect of HCl on the doping and shape control of silicon nanowires

Résumé

The introduction of Hydrogen Chloride during the in-situ doping of Silicon Nanowires (SiNWs) grown using the Vapour Liquid Solid (VLS) mechanism was investigated. Compared with non-chlorinated atmospheres, the use of HCl with dopant gases considerably improves the surface morphology of the SiNWs, leading to extremely smooth surfaces and a greatly reduced tapering. The variations in the wire diameter are massively reduced for boron doping, and can not be measured at 600°C for phosphorous over several tens of micrometers. This remarkable feature is accompanied by a frozen gold migration from the catalyst, with no noticeable levels of gold clusters observed using scanning electron microscopy. A detailed study of the NWs apparent resistivity reveals that the dopant incorporation is effective for both types of doping. A graph linking the apparent resistivity to the dopant to silane dilution ratio is built for both types of doping and discussed in the frame of the previous results.
Fichier principal
Vignette du fichier
422006Rev22Mar12.pdf (10.94 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-00762136 , version 1 (24-01-2019)

Identifiants

Citer

P. Gentile, A. Solanki, N. Pauc, F. Oehler, B. Salem, et al.. Effect of HCl on the doping and shape control of silicon nanowires. Nanotechnology, 2012, 23 (21), pp.215702. ⟨10.1088/0957-4484/23/21/215702⟩. ⟨hal-00762136⟩
104 Consultations
70 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More