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Communication Dans Un Congrès Année : 2012

High temperature anti short circuit function for normally-on SiC JFET in an inverter leg configuration

Khalil El Falahi
  • Fonction : Auteur
  • PersonId : 917366
Fabien Dubois
Dominique Bergogne
  • Fonction : Auteur
  • PersonId : 902061
Luong Viet Phung
Cyril Buttay

Résumé

The SiC JFET is commercially available as a normally-on device. In an inverter leg configuration, many temperature effects must be compensated. Moreover, specific safety functions have to be implemented and the JFET drivers are generally the best locations to implement latter requirements. The paper describes experimental results about a SOI CMOS core driver operated up to 250°C. Particularly, an option is presented to compensate for the decrease in the driver output current with temperature. It is also demonstrated primary results of the integration of an anti short-circuit solution previously verified as a hybrid vehicle. It is shown that the reactivity of the safety function is reduced to less than 5μs at 250°C compared to 100μs in earlier vehicle at 200°C.
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Dates et versions

hal-00760372 , version 1 (03-12-2012)

Identifiants

  • HAL Id : hal-00760372 , version 1

Citer

Khalil El Falahi, Fabien Dubois, Dominique Bergogne, Luong Viet Phung, Cyril Buttay, et al.. High temperature anti short circuit function for normally-on SiC JFET in an inverter leg configuration. HiTEC 2012, May 2012, Albuquerque, United States. 6p. ⟨hal-00760372⟩
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