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Article Dans Une Revue Sensor letters Année : 2011

SiC-junction field effect transistor temperature sensor: Theoretical analysis and experimental validation

Résumé

This paper reports on a new and innovative compact design of silicon carbide based sensor. The aim is to offset the limitations of the existing temperature-sensors. The proposed sensor design operates properly for wide range of temperature as it is based on SiC-JFETs devices. Three devices are tested and experimental results are confronted to device simulations for a large temperature range. Copyright © 2011 American Scientific Publishers All rights reserved.
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Dates et versions

hal-00747433 , version 1 (31-10-2012)

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Tarek Ben Salah, Sameh Mtimet, Hervé Morel. SiC-junction field effect transistor temperature sensor: Theoretical analysis and experimental validation. Sensor letters, 2011, 9 (6), pp.2347-2350. ⟨10.1166/sl.2011.1762⟩. ⟨hal-00747433⟩
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