SiC-junction field effect transistor temperature sensor: Theoretical analysis and experimental validation
Résumé
This paper reports on a new and innovative compact design of silicon carbide based sensor. The aim is to offset the limitations of the existing temperature-sensors. The proposed sensor design operates properly for wide range of temperature as it is based on SiC-JFETs devices. Three devices are tested and experimental results are confronted to device simulations for a large temperature range. Copyright © 2011 American Scientific Publishers All rights reserved.