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Communication Dans Un Congrès Année : 2012

Electromigration degradation mechanism analysis of SnAgCu interconnects for eWLB package

Résumé

his paper focuses on electromigration of SnAgCu interconnects of Fanout embedded Wafer Level Ball Grid Array (FO-eWLB) technology. Black's parameters are analyzed regarding stage of degradation through approaches based on resistance slope modeling and on Failure Criterion (FC).
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Dates et versions

hal-00747359 , version 1 (31-10-2012)

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T. Frank, C. Chappaz, L. Arnaud, X. Federspiel, F. Colella, et al.. Electromigration degradation mechanism analysis of SnAgCu interconnects for eWLB package. IEEE International Reliability Physics Symposium (IRPS'12), Apr 2012, Anaheim, CA, United States. pp.2E.5.1 - 2E.5.6, ⟨10.1109/IRPS.2012.6241792⟩. ⟨hal-00747359⟩
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