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Article Dans Une Revue Applied Physics Letters Année : 2012

Role of deep and shallow donor levels on n-type conductivity of hydrothermal ZnO

Résumé

The residual n-type conductivity of O-polar hydrothermally grown ZnO single crystals and the role of annealing on the transport properties are assessed by temperature dependent Hall measurements on a wide 20-800 K temperature range. A deep level lying 250 meV below the conduction band is responsible for the residual n-type conductivity of unannealed samples. After annealing, a shallow donor level with 25 meV ionization energy becomes responsible for the sample conductivity in the room temperature range. Thanks to high temperature Hall measurement, the coexistence of the deep and the shallow level has been demonstrated in the case of annealed sample.
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Dates et versions

hal-00740909 , version 1 (11-10-2012)

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Stéphane Brochen, Carole Granier, Guy Feuillet, Julien Pernot. Role of deep and shallow donor levels on n-type conductivity of hydrothermal ZnO. Applied Physics Letters, 2012, 100 (5), pp.052115. ⟨10.1063/1.3681168⟩. ⟨hal-00740909⟩
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