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Conference Papers Year : 2012

On the modelling of the direct bonding of two silicon surfaces

Abstract

Direct bonding is a well-known process. However in order to use this process in spatial instrument fabrication the mechanical resistance needs to be quantified. In order to improve bonded strength, optimal parameters of the process are found by studying the influence of annealing time, temperature and roughness which are studied using three experimental methods: double shear, cleavage and wedge tests. Those parameters are chosen thanks to the appearance of time/temperature equivalence. Results brought out a predictive model of the bonding energy.
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hal-00740761 , version 1 (19-11-2021)

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Natacha Cocheteau, Frédéric Lebon, Iulian Rosu, Aurelien Maurel-Pantel, Sonia Ait Zaid, et al.. On the modelling of the direct bonding of two silicon surfaces. Eleventh International Conference on Computational Structures Technology, Sep 2012, Dubrovnik, Croatia. ⟨10.4203/ccp.99.143⟩. ⟨hal-00740761⟩
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