Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test. - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronics Reliability Année : 2012

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test.

Résumé

This paper deals with the physical study of the Schottky contact after pulsed-RF saturated life test under enhanced drain bias voltage on power HEMTs. Electrical measurements showed a pinch-off voltage (VP) shift, a decrease of output power and average drain current while Photon Emission Microscopy (PEM) was used to identify the degradation distribution along the 80 fingers die. Finally, Transmission Electron Microscopy (TEM) is performed to point out the different Schottky degradation between a central finger and an outer one.

Domaines

Electronique

Dates et versions

hal-00735905 , version 1 (27-09-2012)

Identifiants

Citer

Jean Baptiste Fonder, Laurence Chevalier, Cécile Genevois, O. Latry, Cédric Duperrier, et al.. Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test.. Microelectronics Reliability, 2012, pp.2205. ⟨10.1016/j.microrel.2012.06.053⟩. ⟨hal-00735905⟩
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