Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band Pulsed-RF Operating Life. - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronics Reliability Année : 2012

Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band Pulsed-RF Operating Life.

O. Latry
Philippe Eudeline
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Résumé

AlGaN/GaN HEMTs are on the way to lead the RF-power amplification field according to their outstanding performances. However, due to its relative youth, reliability studies in several types of operating conditions allow to understand mechanisms peculiar to this technology and responsible for the wearing out of devices. This paper reports the reliability study on two power amplifiers using AlGaN/GaN HEMT. Based on results of a previous study of 1280 h in standard operating conditions wherein no evolution of electrical parameters have been observed, two ageing tests in deep class-AB (432 h) and class-B (795 h) are performed under pulsed-RF operating life at high drain bias voltages and saturated operation. This study shows a drift in RF performances which is linked with the evolution of electrical parameters (RDSON, gm and VP). Similar kinetics and amplitude of degradations are observed revealing quasi-similar contribution of thermal effects in both cases. Degradations are supposed to be related to trapped charges phenomena induced by high voltage operating conditions. Although, several results attest to this hypothesis, a part of the evolutions seems to be linked with structural changes.

Domaines

Electronique

Dates et versions

hal-00735899 , version 1 (27-09-2012)

Identifiants

Citer

Jean Baptiste Fonder, O. Latry, Cédric Duperrier, Michel Stanislawiak, Hichame Maanane, et al.. Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band Pulsed-RF Operating Life.. Microelectronics Reliability, 2012, In press. ⟨10.1016/j.microrel.2012.04.024⟩. ⟨hal-00735899⟩
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