Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy. - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Alloys and Compounds Année : 2012

Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy.

Résumé

AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 degrees C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction theta - 2 theta scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 degrees C using a NL grown at 850 degrees C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 degrees C and 1400 degrees C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm. (C) 2012 Elsevier B. V. All rights reserved.

Domaines

Matériaux

Dates et versions

hal-00728110 , version 1 (04-09-2012)

Identifiants

Citer

M. Balaji, A. Claudel, V. Fellmann, I. Gelard, E. Blanquet, et al.. Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy.. Journal of Alloys and Compounds, 2012, 526, pp.103-109. ⟨10.1016/j.jallcom.2012.02.111⟩. ⟨hal-00728110⟩
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