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Communication Dans Un Congrès Année : 2010

Transient Voltage Overshoots of High Voltage ESD Protections Based on Bipolar Transistors in Smart Power Technology

Résumé

Transient voltage overshoots of a high voltage (20 V) ESD clamp based on bipolar transistors in a smart power technology are studied using different TLP pulse conditions (rise time, voltage amplitude). The physical mechanisms involved during the ESD clamp turn-on are thoroughly analyzed by the mean of TCAD simulations, allowing the definition of a set of design guidelines for the overshoot reduction.
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Dates et versions

hal-00722641 , version 1 (02-08-2012)

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  • HAL Id : hal-00722641 , version 1

Citer

Antoine Delmas, Amaury Gendron, Marise Bafleur, Nicolas Nolhier, Chai Gill. Transient Voltage Overshoots of High Voltage ESD Protections Based on Bipolar Transistors in Smart Power Technology. Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Oct 2010, AUSTIN, United States. pp.253-256. ⟨hal-00722641⟩
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