X-ray study of antiphase domains and their stability in MBE grown GaP on Si.
Résumé
90 and 20 nm thick GaP layers on Si substrate grown by various MBE growth modes are studied. A complete analysis is performed using AFM, TEM imaging and X-ray diffraction giving crucial information on structural defects properties and here particularly on antiphase domains. Thermodynamic evolution of antiphase boundaries is then discussed.