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Article Dans Une Revue Thin Solid Films Année : 2012

Evidence of diffusion at BaTiO3/silicon interfaces

Résumé

Interdiffusion at interfaces between several materials in integrated structures is becoming more and more challenging. We performed a deep study of diffusion in BaTiO3/Si films using X-Ray Diffraction analysis, Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy at intermediate annealing stages. We show that controlling local chemistry through inter-diffusion phenomena at interfaces is possible thanks to the structural and chemical matching between BaTiO3 and fresnoite. BaTiO3/Si stacks can serve as a model system to investigate the interphase generation at interfaces.

Dates et versions

hal-00663012 , version 1 (25-01-2012)

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U-Chan Chung Seu, Dominique Michau, Catherine Elissalde, Shunyi Li, Andreas Klein, et al.. Evidence of diffusion at BaTiO3/silicon interfaces. Thin Solid Films, 2012, 520 (6), pp.1997-2000. ⟨10.1016/j.tsf.2011.09.055⟩. ⟨hal-00663012⟩
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