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Article Dans Une Revue European Journal of Electrical Engineering Année : 2011

Evaluation of commercial CMOS SOI drivers in harsh conditions (200°C). Consideration for delay, rise-time and fall-time versus temperature

Khalil El Falahi
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Bruno Allard
Dominique Bergogne
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Dominique Tournier

Résumé

Power electronics based on wide band gap materials, such as silicon carbide (SiC) or gallium nitride (GaN), are nowadays capable of operation at increased ambient temperatures. High Temperature Intelligent Power Modules are unfortunately not available due to a lack of integrated driver able to withstand either harsh environment or enhanced junction temperature due to reduction in the cooling system. The most appropriated technology for such a driver seems to be Silicon on Insulator (SOI). The maximum operating temperature of commercial SOI devices with conventional packaging is usually 150°C up to 175°C as specified by manufacturers. In this paper, we actually try to observe the performance and de-ratings of these SOI circuits at temperatures above 175°C.

Dates et versions

hal-00658759 , version 1 (11-01-2012)

Identifiants

Citer

Khalil El Falahi, Bruno Allard, Dominique Bergogne, Dominique Tournier. Evaluation of commercial CMOS SOI drivers in harsh conditions (200°C). Consideration for delay, rise-time and fall-time versus temperature. European Journal of Electrical Engineering, 2011, 14 (5), pp.587-600. ⟨10.3166/ejee.14.587-600⟩. ⟨hal-00658759⟩
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