Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2012

Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices

Résumé

Metal-semiconductor-metal solar blind ultraviolet photodetectors have been fabricated using both BGaN-GaN and BGaN-AlN superlattices as active layers. A high internal gain (up to 3 × 104 for optical power in the nW range) is obtained with a highly reduced dark current thanks to the boron incorporation. In the high optical power regime (W range), the time response is in the nanosecond range, which is much smaller than that of GaNand ZnO-based ultraviolet photodetectors. Moreover, the boron incorporation in GaN material allows the tuning of the cutoff wavelength.
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hal-00642175 , version 1 (31-01-2022)

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Paternité - Pas d'utilisation commerciale

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Jean-Paul Salvestrini, A. Ahaitouf, H. Srour, S. Gautier, T. Moudakir, et al.. Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices. SPIE Photonic West, Jan 2012, San Francisco, United States. pp.82682S, ⟨10.1117/12.914800⟩. ⟨hal-00642175⟩
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