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Article Dans Une Revue Semiconductor Science and Technology Année : 2010

Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate

Résumé

We report on a type-II InAs/GaSb strained layer superlattice (SLS) photodetector (lambda(cut-off) similar to 4.3 mu m at 77 K) with nBn design grown on a GaAs substrate using interfacial misfit dislocation arrays to minimize threading dislocations in the active region. At 77 K and 0.1 V of the applied bias, the dark current density was equal to 6 x 10(-4) A cm(-2) and the maximum specific detectivity D* was estimated to 1.2 x 10(11) Jones (at 0 V). At 293 K, the zero-bias D* was found to be similar to 10(9) Jones which is comparable to the nBn InAs/GaSb SLS detector grown on the GaSb substrate.

Dates et versions

hal-00641377 , version 1 (15-11-2011)

Identifiants

Citer

Elena Plis, Jean-Baptiste Rodriguez, G. Balakrishnan, Y.D. Sharma, H.S. Kim, et al.. Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate. Semiconductor Science and Technology, 2010, 25 (8), pp.085010. ⟨10.1088/0268-1242/25/8/085010⟩. ⟨hal-00641377⟩
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