On triple dislocation nodes observed by TEM in a Ge(0.4)Si(0.6) film grown on a slightly deviating (001)Si substrate - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Philosophical Magazine Letters Année : 2011

On triple dislocation nodes observed by TEM in a Ge(0.4)Si(0.6) film grown on a slightly deviating (001)Si substrate

Résumé

Specific misfit dislocation configurations are observed by two-beam dark-field transmission electron microscopy in a system formed by a Ge(0.4)Si(0.6) ultrathin film grown on a (0 0 1)Si surface tilted 6 degrees around a < 1 1 0 > axis. An unusual interfacial feature is the presence of triple dislocation nodes linked to 'Y-centres' formed by the meeting of two near-60 degrees dislocations and a slightly inclined edge misfit dislocation. It is shown, from the comparison of experimental and computer-aided images, requiring three-dimensional elastic fields of angular dislocations, that some Lomer misfit dislocation terminations are not simply the emerging points of a single dislocation, but very probably linked to two short dislocation legs of threading dislocations in the film.

Domaines

Matériaux
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Dates et versions

hal-00640178 , version 1 (10-11-2011)

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Citer

S. Neily, S. Youssef, A. Gutakovskii, R. Bonnet. On triple dislocation nodes observed by TEM in a Ge(0.4)Si(0.6) film grown on a slightly deviating (001)Si substrate. Philosophical Magazine Letters, 2011, 91 (8), pp.510-515. ⟨10.1080/09500839.2011.588612⟩. ⟨hal-00640178⟩
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