Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence. - Archive ouverte HAL Accéder directement au contenu
Poster De Conférence Année : 2010

Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.

Résumé

Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.
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Dates et versions

hal-00634162 , version 1 (20-10-2011)

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  • HAL Id : hal-00634162 , version 1

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Pierre Corfdir, Pierre Lefebvre, Amélie Dussaigne, J. Ristic, T. Zhu, et al.. Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.. 10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors - BIAMS 2010, Jul 2010, Halle (Saale), Germany. ⟨hal-00634162⟩
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