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Article Dans Une Revue Journal of Crystal Growth Année : 2011

Analysis of grain orientation in cold crucible continuous casting of photovoltaic Si.

Résumé

Grain orientation in multi-crystalline photovoltaic silicon is analyzed in the case of a square shaped ingot produced by cold crucible continuous casting (4C). This technique leads to a specific grain structure: horizontal on the wall where nucleation occurs and vertical at the center of the ingot. EBSD analysis along a solidification path shows that successive Sigma 3 twinning is the predominant source of variation in grain orientation. In fact, depending on the location along the solidification path, only 15-35% of grain boundaries are random boundaries without Sigma 3(n) twinning relationship (1 <= n <= 5) and 34-48% are Sigma 3 twins. The grain orientation distribution is similar at the beginning and end of solidification, and the number of low angle grain boundaries is negligible. (C) 2010 Elsevier B.V. All rights reserved

Domaines

Matériaux

Dates et versions

hal-00633945 , version 1 (19-10-2011)

Identifiants

Citer

B. Gallien, T. Duffar, S. Lay, R. Robaut. Analysis of grain orientation in cold crucible continuous casting of photovoltaic Si.. Journal of Crystal Growth, 2011, 318 (1), pp.208-211. ⟨10.1016/j.jcrysgro.2010.10.100⟩. ⟨hal-00633945⟩
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