Integrated common mode capacitors for SiC JFET inverters - Archive ouverte HAL
Communication Dans Un Congrès Année : 2011

Integrated common mode capacitors for SiC JFET inverters

Rémi Robutel
  • Fonction : Auteur
Christian Martin
Hervé Morel
Paulo Mattavelli
  • Fonction : Auteur
Dushan Boroyevitch
  • Fonction : Auteur
Régis Meuret
  • Fonction : Auteur
  • PersonId : 839400

Résumé

SiC-JFET based inverters can achieve very fast switching, hence reducing the commutation losses, at the cost of increased Electro-Magnetic Interferences (EMI). To keep the EMI conducted emissions within reasonable limits, we propose to integrate some small-values capacitors directly into the power module. Common Mode (CM) is investigated and compared with a standard configuration. The high frequency noise, which is usually difficult to filter, is contained in a close loop with the switching source, and far from the network. To demonstrate this concept, simulations are used as well as experiments on a SiC-JFET half-bridge structure. Benefits and limitations are investigated in the case of mid-power range inverters for aircraft applications.
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Dates et versions

hal-00618665 , version 1 (02-09-2011)

Identifiants

Citer

Rémi Robutel, Christian Martin, Hervé Morel, Paulo Mattavelli, Dushan Boroyevitch, et al.. Integrated common mode capacitors for SiC JFET inverters. APEC, Mar 2011, Fort Worth, TX, United States. pp.196 - 202, ⟨10.1109/APEC.2011.5744597⟩. ⟨hal-00618665⟩
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