Article Dans Une Revue Journal of Applied Physics Année : 1999

Artificial antiferromagnetic tunnel junction sensors based on Co/Ru/Co sandwiches

Résumé

A novel method is used for pinning the magnetization of the magnetically hard subsystem in micron-size magnetic tunnel junctions: the so-called artificial antiferromagnetic structure. The latter uses the strong antiparallel exchange coupling between two Co layers through a Ru spacer layer to ensure a high rigidity of the hard subsystem magnetization. The tunnel barriers were formed by sputter etching previously deposited Al layers in a rf Ar/O2 plasma. Wafers, 3 in. in diameter, were patterned into arrays of square junctions with lateral sizes of 20 and 50 μm. All junctions of a given size show resistances reproducible within several percents. The tunnel magnetoresistance (TMR) is found to be independent of the junction size and TMR ratios of 14%-16% are achieved at room temperature.

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hal-00611081 , version 1 (21-08-2024)

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Coriolan Tiusan, Michel Hehn, Kamel Ounadjela, Yves Henry, Jean Hommet, et al.. Artificial antiferromagnetic tunnel junction sensors based on Co/Ru/Co sandwiches. Journal of Applied Physics, 1999, 85 (8), pp.5276. ⟨10.1063/1.369853⟩. ⟨hal-00611081⟩
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