Article Dans Une Revue Applied Physics Letters Année : 2011

Voltage controlled terahertz transmission through GaN quantum wells

Résumé

We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement to changes in the differential mobility of the two-dimensional electron gas.

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hal-00610356 , version 1 (25-05-2021)

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T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, et al.. Voltage controlled terahertz transmission through GaN quantum wells. Applied Physics Letters, 2011, 99 (8), pp.082101. ⟨10.1063/1.3627183⟩. ⟨hal-00610356⟩
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