Conference Papers
Year : 2010
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https://hal.science/hal-00604565
Submitted on : Wednesday, June 29, 2011-11:27:20 AM
Last modification on : Thursday, April 11, 2024-1:18:11 PM
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- HAL Id : hal-00604565 , version 1
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L. Negre, Daniel Roy, S. Boret, P. Scheer, N. Kauffmann, et al.. Impact of hot carrier stress on small signal MOSFET RF parameters. IEEE Integrated Reliability Workshop IRW 2010, 2010, Lake Tahoe, United States. ⟨hal-00604565⟩
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