Impact of hot carrier stress on small signal MOSFET RF parameters - Archive ouverte HAL Access content directly
Conference Papers Year : 2010
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hal-00604565 , version 1 (29-06-2011)

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  • HAL Id : hal-00604565 , version 1

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L. Negre, Daniel Roy, S. Boret, P. Scheer, N. Kauffmann, et al.. Impact of hot carrier stress on small signal MOSFET RF parameters. IEEE Integrated Reliability Workshop IRW 2010, 2010, Lake Tahoe, United States. ⟨hal-00604565⟩
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