Strain sensitivity of gate leakage in biaxially strained FD-SOI nMOSFETs: a benefit for the performance trade-off and a novel way to extract the strain-induced band offset - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2009

Strain sensitivity of gate leakage in biaxially strained FD-SOI nMOSFETs: a benefit for the performance trade-off and a novel way to extract the strain-induced band offset

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hal-00603824 , version 1 (27-06-2011)

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  • HAL Id : hal-00603824 , version 1

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F. Rochette, X. Garros, G. Reimbold, F. Andrieu, M. Cassé, et al.. Strain sensitivity of gate leakage in biaxially strained FD-SOI nMOSFETs: a benefit for the performance trade-off and a novel way to extract the strain-induced band offset. International Conference on Insulating Films on Semiconductors (INFOS), Jul 2009, Cambridge, United Kingdom. ⟨hal-00603824⟩
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