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Communication Dans Un Congrès Année : 2009

Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires

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hal-00603809 , version 1 (27-06-2011)

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  • HAL Id : hal-00603809 , version 1

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K. Tachi, M. Casse, D. Jang, C. Dupré, A. Hubert, et al.. Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires. IEEE International Electron Devices Meeting, Dec 2009, Balitimore, United States. ⟨hal-00603809⟩
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