Article Dans Une Revue Applied Physics Letters Année : 2010

Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates

Résumé

The shape of c-oriented GaN nanostructures is found to be directly related to the crystal polarity. As evidenced by convergent beam electron diffraction applied to GaN nanostructures grown by metal-organic vapor phase epitaxy on c-sapphire substrates: wires grown on nitridated sapphire have the N-polarity ([000math]) whereas pyramidal crystals have Ga-polarity ([0001]). In the case of homoepitaxy, the GaN wires can be directly selected using N-polar GaN freestanding substrates and exhibit good optical properties. A schematic representation of the kinetic Wulff's plot points out the effect of surface polarity.

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hal-00601864 , version 1 (20-06-2011)

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Xiao Jun Chen, Guillaume Perillat-Merceroz, Diane Sam-Giao, Christophe Durand, Joël Eymery. Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates. Applied Physics Letters, 2010, 97 (15), pp.151909. ⟨10.1063/1.3497078⟩. ⟨hal-00601864⟩
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